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| SUNSET AT NANO-TORONTO | ||
JOSÉ M. MÁNUEL DELGADO |
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| Interface between gallium nitride and sapphire layers thinned through argon ion milling. Antifase boundary domains in the gallium nitride assemble the skyline of the city of Toronto (Canada) next to its bay (see image below). The hole, at a certain area of the interface (through which the electron beam intensity is the biggest), resembles a setting sun. This image has been taken at a Jeol 1200EX, with a working voltage of 120kV, in Diffraction Contrast mode conditions, for a heterostructure consisting in a GaN epilayer on an Al2O3 (sapphire) substrate thinned up to an electron-transparent thickness, and prepared with a cross-section orientation through traditional methods. | ||
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